发明名称 Address latch circuit of memory device
摘要 An address latch circuit of a memory device is disclosed. A latch operation is disabled while an address signal makes a level transition in the memory device, and then enabled when the address signal is stabilized after the level transition. Therefore, it is possible to reduce power consumption caused during the level transition of the address signal.
申请公布号 US7215594(B2) 申请公布日期 2007.05.08
申请号 US20040980350 申请日期 2004.11.03
申请人 HYNIX SEMICONDUCTOR INC. 发明人 IM JAE-HYUK;KIM KYOUNG-NAM
分类号 G11C8/00;G11C11/408;G11C5/06;G11C7/10;H03K3/12 主分类号 G11C8/00
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