发明名称 |
Method for fabricating a semiconductor memory cell |
摘要 |
Semiconductor memory cell and also a corresponding fabrication method are described, in which a first or bottom electrode device of the memory element of the semiconductor memory cell according to the invention and the gate electrode device of the underlying field effect transistor as selection transistor of the semiconductor memory cell are formed as the same material region or with a common material region.
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申请公布号 |
US7214587(B2) |
申请公布日期 |
2007.05.08 |
申请号 |
US20050074946 |
申请日期 |
2005.03.09 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
PINNOW CAY-UWE;SYMANCZYK RALF |
分类号 |
H01L21/336;G11C11/24;H01L21/8239;H01L27/105;H01L27/24 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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