Method of fabricating ohmic contact on n-type gallium nitride (GaN) of room temperature by plasma surface treatment

摘要

Forming low contract resistance metal contacts on GaN films by treating a GaN surface using a chlorine gas Inductively Coupled Plasma (ICP) etch process before the metal contacts are formed. Beneficially, the GaN is n-type and doped with Si, while the metal contacts include alternating layers of Ti and Al. Additionally, the GaN film is dipped in a solution of HCl:H₂O prior to metal contact formation.