发明名称 Method for fabricating vertical offset structure
摘要 A method for fabricating a vertical offset structure that forms a complete vertical offset on a wafer includes a first trench forming step of forming first trenches on a wafer; a first etching step of performing a first patterning for determining etching positions of second and third trenches by depositing a first thin film on the wafer, performing a second patterning for temporarily protecting the etching position of the third trench by depositing a second thin film on the first thin film and the wafer, and then forming the second trenches by etching the wafer; a second etching step of forming a protection layer on side surfaces of the second trenches and then vertically extending the second trenches by etching the wafer; a third etching step of removing the second thin film and then forming the third trench by etching a position from which the second thin film is removed; and a fourth etching step of horizontally extending the second trenches vertically extended at the second etching step and the third trench by etching the wafer.
申请公布号 US7214559(B2) 申请公布日期 2007.05.08
申请号 US20050134521 申请日期 2005.05.23
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM JONG-PAL;LEE SANG-WOO;LEE BYEUNG-LEUL
分类号 H01L21/00;B81B3/00;B81C1/00;G01P15/08;G01P15/125;G02B26/08 主分类号 H01L21/00
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