发明名称 |
Method for fabricating vertical offset structure |
摘要 |
A method for fabricating a vertical offset structure that forms a complete vertical offset on a wafer includes a first trench forming step of forming first trenches on a wafer; a first etching step of performing a first patterning for determining etching positions of second and third trenches by depositing a first thin film on the wafer, performing a second patterning for temporarily protecting the etching position of the third trench by depositing a second thin film on the first thin film and the wafer, and then forming the second trenches by etching the wafer; a second etching step of forming a protection layer on side surfaces of the second trenches and then vertically extending the second trenches by etching the wafer; a third etching step of removing the second thin film and then forming the third trench by etching a position from which the second thin film is removed; and a fourth etching step of horizontally extending the second trenches vertically extended at the second etching step and the third trench by etching the wafer.
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申请公布号 |
US7214559(B2) |
申请公布日期 |
2007.05.08 |
申请号 |
US20050134521 |
申请日期 |
2005.05.23 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM JONG-PAL;LEE SANG-WOO;LEE BYEUNG-LEUL |
分类号 |
H01L21/00;B81B3/00;B81C1/00;G01P15/08;G01P15/125;G02B26/08 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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