发明名称 |
Method of manufacturing a semiconductor device that includes patterning sub-islands |
摘要 |
A method of manufacturing a semiconductor device is provided which uses a laser crystallization method capable of increasing substrate processing efficiency. An island-like semiconductor film including one or more islands is formed by patterning (sub-island). The sub-island is then irradiated with laser light to improve its crystallinity, and thereafter patterned to form an island. From pattern information of a sub-island, a laser light scanning path on a substrate is determined such that at least the sub-island is irradiated with laser light. In other words, the present invention runs laser light so as to obtain at least the minimum degree of crystallization of a portion that has to be crystallized, instead of irradiating the entire substrate with laser light.
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申请公布号 |
US7214573(B2) |
申请公布日期 |
2007.05.08 |
申请号 |
US20020314452 |
申请日期 |
2002.12.09 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI;SHIBATA HIROSHI;TANAKA KOICHIRO;HIROKI MASAAKI;AKIBA MAI |
分类号 |
H01L21/00;H01L21/20;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/786 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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