Silicon single crystal wafer process apparatus, silicon single crystal wafer, and manufacturing method of silicon epitaxial wafer

摘要

A silicon single crystal wafer process apparatus ( 10 ) having: a process chamber ( 11 ); a susceptor ( 12 ) which is disposed in the process chamber ( 11 ), and on an upper surface of which the silicon single crystal wafer ( 19 ) is placed; and a lift pin ( 14 ) which is provided to be capable of a going up and down operation with respect to the susceptor ( 12 ), for attaching or detaching the silicon single crystal wafer ( 19 ) to or from the susceptor ( 12 ) with the going up and down operation, in a state to support the silicon single crystal wafer ( 19 ) from a lower surface side, wherein the lift pin ( 14 ) is subjected to polishing on a contact end surface ( 14 d) which contacts with a rear surface of the silicon single crystal wafer ( 19 ).