发明名称 |
Method for forming a barrier layer in an integrated circuit in a plasma with source and bias power frequencies applied through the workpiece |
摘要 |
A barrier layer is formed in an integrated circuit by providing a metal target near a ceiling of the chamber and a wafer support pedestal facing the target near a floor of the chamber. A process gas is introduced into the vacuum chamber. A target-sputtering plasma is maintained at the target to produce a stream of principally neutral atoms flowing from the target toward the wafer for vapor deposition. A wafer-sputtering plasma is maintained near the wafer support pedestal to produce a stream of sputtering ions toward the wafer support pedestal for re-sputtering. The sputtering ions are accelerated across a plasma sheath at the wafer in a direction normal to a surface of the wafer to render the sputter etching highly selective for horizontal surfaces.
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申请公布号 |
US7214619(B2) |
申请公布日期 |
2007.05.08 |
申请号 |
US20050052010 |
申请日期 |
2005.02.03 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
BROWN KARL M.;PIPITONE JOHN;MEHTA VINEET |
分类号 |
H01L21/44 |
主分类号 |
H01L21/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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