发明名称 |
MAGNETIC MEMORY USING MAGNETIC DOMAIN MOTION |
摘要 |
<p>A magnetic memory device is provided. The magnetic memory device includes a recording layer, a reference layer, a first input portion, and a second input portion. The recording layer has perpendicular magnetization direction and a plurality of magnetic domains, and the reference layer corresponds to a portion of the recording layer and has a pinned magnetization direction. The recording layer has a data storage cell wherein a plurality of data bit regions each consisting of a magnetic domain are formed. The magnetic domain corresponds to an effective size of the reference layer. The first input portion inputs at least one of a writing signal and a reading signal. The second input portion is electrically connected to the recording layer and inputs a magnetic domain motion signal in order to move data stored in a data bit region of the recording layer to an adjoining data bit region.</p> |
申请公布号 |
KR100718153(B1) |
申请公布日期 |
2007.05.08 |
申请号 |
KR20060015623 |
申请日期 |
2006.02.17 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM, TAE WAN;KIM, KEE WON;CHO, YOUNG JIN;HWANG, IN JUN |
分类号 |
H01L27/115 |
主分类号 |
H01L27/115 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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