发明名称 |
GROWTH OF NITRIDE SEMICONDUCTOR CRYSTALS |
摘要 |
A process for growing a crystal of a nitride semiconductor in which after the step of mounting a substrate (12) in a reaction tube (11), the step of feeding a first material gas containing a Group 3 element onto the substrate in the reaction tube and the step of feeding a second material gas containing elemental nitrogen onto the substrate in the reaction tube are carried out alternately to deposit a nitride semiconductor crystal directly on the substrate. The number of moles of the elemental nitrogen contained in the second material gas has a ratio of 200 or more to the number of moles of the Group 3 element in the first material gas. |
申请公布号 |
KR20070048274(A) |
申请公布日期 |
2007.05.08 |
申请号 |
KR20077007507 |
申请日期 |
2007.03.30 |
申请人 |
HONDA MOTOR CO., LTD.;KAWANISHI HIDEO |
发明人 |
HASHIMOTO HIDEKI;HORIUCHI AKIHIKO;KAWANISHI HIDEO |
分类号 |
H01L21/205 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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