发明名称 Semiconductor memory system having multiple system data buses
摘要 The semiconductor memory system includes a memory controller, N system data buses, and first through P-th memory module groups. The N system data buses are connected to the memory controller and respectively have a width of M/N bits. The first through P-th memory module groups are connected to the N system data buses and respectively have N memory modules. In each of the first through P-th memory module groups, a different one of the N system data buses is connected to each of the N memory modules, and each of the N system data buses has a data bus width of M/N bits. The first through P-th memory module groups are operated in response to first through P-th corresponding chip select signals. M is the bit-width of an entire system data bus of the semiconductor memory system. The N system data buses are wired such that data transmission times are the same from each N memory modules that operate in response to the same chip select signal to the memory controller.
申请公布号 US7215561(B2) 申请公布日期 2007.05.08
申请号 US20030644735 申请日期 2003.08.21
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 PARK MYUN-JOO;SO BYUNG-SE;LEE JAE-JUN
分类号 G06F13/16;G11C5/00;G06F13/42;G11C8/00 主分类号 G06F13/16
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