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发明名称
METHOD FOR FORMING GATE INSULATING FILM, SEMICONDUCTOR DEVICE AND COMPUTER RECORDING MEDIUM
摘要
申请公布号
KR20070047773(A)
申请公布日期
2007.05.07
申请号
KR20077002817
申请日期
2007.02.05
申请人
TOKYO ELECTRON LIMITED
发明人
NISHITA TATSUO;ISHIZUKA SHUUICHI;FUJINO YUTAKA;NAKANISHI TOSHIO;SATO YOSHIHIRO
分类号
H01L21/316;H01L21/02
主分类号
H01L21/316
代理机构
代理人
主权项
地址
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