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发明名称
氮化镓系化合物半导体积层物及其制法
摘要
本发明之目的在于,提供一种可降低驱动电压,且具有良好发光输出之氮化镓系化合物半导体发光元件之制造有用之氮化镓系化合物半导体积层物。本发明之氮化镓系化合物半导体积层物,系在基板上具有n型层、发光层及p型层,该发光层系交错由井户层及障壁层所积层之多重量子构造,且该发光层系配置为由n型层及p型层所挟持,其特征为:构成该多重量子构造之井户层,系由厚度不匀之井户层及厚度均匀之井户层所构成。
申请公布号
TW200717861
申请公布日期
2007.05.01
申请号
TW095110847
申请日期
2006.03.29
申请人
昭和电工股份有限公司
发明人
佐藤寿朗;三木久幸
分类号
H01L33/00(2006.01)
主分类号
H01L33/00(2006.01)
代理机构
代理人
何金涂;何秋远
主权项
地址
日本
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