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发明名称
具介电材料隔离沟渠形成方法
摘要
本发明是关于一种利用介电材料来形成半导体装置的沟渠的方法,以及关于一种在一记忆装置中形成一隔离沟渠的方法。
申请公布号
TW200717705
申请公布日期
2007.05.01
申请号
TW095137455
申请日期
2006.10.11
申请人
奇梦达股份有限公司
发明人
乌尔威尔郝森;亨利海德梅尔;耶尔恩雷谷尔
分类号
H01L21/76(2006.01)
主分类号
H01L21/76(2006.01)
代理机构
代理人
蔡清福
主权项
地址
德国
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