NONVOLATILE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME

摘要

A non-volatile memory device and a manufacturing method thereof are provided to reduce a space between strings by employing a common bit line structure, thereby improving a degree of integration. A semiconductor substrate of first conductive type has first and second pins(105a,105b), in which one ends of the first and second pins are connected to common bit line electrodes(160a,160b). Plural control gate electrodes(150) extend across the first and second pins. A first string selection gate electrode(155a) is interposed between the common bit line electrode and the control gate electrodes. A second string selection gate electrode(155b) is interposed between the first string selection gate electrode and the control gate electrodes. Portions of the first and second pins are made of a material of second conductive type.