发明名称 |
Method for fabricating a thin film resistor |
摘要 |
A method of fabricating high resistivity thin film resistors. An isolation region is formed on a substrate to isolate the active regions. A polysilicon layer is formed above the substrate. A diffusion barrier layer is formed above the polysilicon layer. Lightly doped ions are implanted in the polysilicon layer. The substrate is annealed at a high temperature. The diffusion barrier layer and the polysilicon layer are patterned to form a high-resistive thin film resistor. Spacers are formed on the sidewalls of the high-resistive thin film resistor.
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申请公布号 |
US7212396(B2) |
申请公布日期 |
2007.05.01 |
申请号 |
US20020072339 |
申请日期 |
2002.02.07 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
WU BING-CHANG |
分类号 |
H01G9/042;H01L21/02;H01L21/84;H01L27/06;H01L27/105;H01L27/12 |
主分类号 |
H01G9/042 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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