| 摘要 |
A CMOS thin film transistor having a semiconductor layer formed in a zigzag form on an insulating substrate, and a PMOS transistor region and an NMOS transistor region and a gate electrode having at least one slot crossing the semiconductor layer, wherein the semiconductor layer has an MILC surface existing on the PMOS transistor region and the NMOS transistor region, and the method of manufacturing the same, whereby a manufacturing process of the CMOS TFT is simple and the leakage current is decreased.
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