发明名称 Heat-processing method for semiconductor process under a vacuum pressure
摘要 A method for subjecting target substrates to a heat process under a vacuum pressure includes a transfer step, heating-up and pressure-reducing step, and heat-processing step. The transfer step is arranged to transfer into a reaction chamber a holder that supports the substrates at intervals. The heating-up and pressure-reducing step following the transfer step is arranged to heat up the reaction chamber to a process temperature, and exhaust the reaction chamber to a process pressure. During the heating-up and pressure-reducing step, the reaction chamber is set at the process pressure after being set at the process temperature, to form a state where the reaction chamber has the process temperature under a pressure higher than the process pressure. The heat-processing step following the heating-up and pressure-reducing step is arranged to subject the substrates to the heat process at the process temperature and process pressure.
申请公布号 US7211514(B2) 申请公布日期 2007.05.01
申请号 US20040924959 申请日期 2004.08.25
申请人 TOKYO ELECTRON LIMITED 发明人 FUJITA TAKEHIKO;TAMURA AKITAKE;SUZUKI KEISUKE;HASEBE KAZUHIDE;OKADA MITSUHIRO
分类号 H01L21/324;H01L21/44;C23C16/44;C23C16/46;H01L21/00;H01L21/205 主分类号 H01L21/324
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