发明名称 |
Method of fabricating gate electrode of semiconductor device |
摘要 |
A method of fabricating a gate electrode of a semiconductor device is disclosed. A disclosed method comprises growing a silicon epitaxial layer on a silicon substrate; making at least one trench through the epitaxial layer and filling the trench with a first oxide layer; etching the first oxide layer to form reverse spacers in the trench; depositing a second oxide layer and a polysilicon layer over the silicon substrate including the trench and the reverse spacers and forming a gate; implanting ions in the silicon substrate at both sides of the gate to form pocket-well and LDD areas; depositing a nitride layer over the silicon substrate including the gate and etching the nitride layer to form spacers; implanting ions using the spacers and the gate as a mask to make a source/drain region; and forming a silicide layer on the top of the gate electrode and the silicon epitaxial layer positioned on the source/drain region.
|
申请公布号 |
US7211491(B2) |
申请公布日期 |
2007.05.01 |
申请号 |
US20040026287 |
申请日期 |
2004.12.30 |
申请人 |
DONGBU ELECTRONICS CO., LTD. |
发明人 |
CHO YONG SOO |
分类号 |
H01L21/336;H01L21/28 |
主分类号 |
H01L21/336 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|