发明名称 Process for manufacturing semiconductor device and semiconductor wafer
摘要 A process for manufacturing a semiconductor device includes defining chip sections on a wafer by scribe lines with each chip section having chip electrodes formed thereon. The wafer is covered with a passivating film except for on the chip electrodes. Aluminum interconnection layers are provided such that each layer is connected to the chip electrode at one end thereof and the other end of the layer is extended towards the central portion of the chip section. A cover coating film is applied on the passivating film and the layers. A number of apertures are formed in the coating film passing therethrough, and bump electrodes are formed at the position corresponding to the apertures. The chip sections are then separated from each other along the scribe lines into semiconductor devices.
申请公布号 USRE39603(E1) 申请公布日期 2007.05.01
申请号 US20030645782 申请日期 2003.08.22
申请人 NEC CORPORATION 发明人 KATA KEIICHIRO;CHIKAKI SHINICHI
分类号 H01L23/544;H01L21/60;H01L21/78;H01L23/12;H01L23/485 主分类号 H01L23/544
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