发明名称 |
Localized halo implant region formed using tilt pre-amorphization implant and laser thermal anneal |
摘要 |
The present invention enables the production of improved high-reliability, high-density semiconductor devices. The present invention provides the high-density semiconductor devices by decreasing the size of semiconductor device structures, such as gate channel lengths. Short-channel effects are prevented by the use of highly localized halo implant regions formed in the device channel. Highly localized halo implant regions are formed by a tilt pre-amorphization implant and a laser thermal anneal of the halo implant region.
|
申请公布号 |
US7211489(B1) |
申请公布日期 |
2007.05.01 |
申请号 |
US20040934378 |
申请日期 |
2004.09.07 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
XIANG QI;OGLE ROBERT B.;PATON ERIC N.;TABERY CYRUS E.;YU BIN |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|