| 摘要 |
A nonvolatile ferroelectric memory device comprises a cell array block, a sense amplifier unit, a main amplifier unit and a data bus unit. The ferroelectric sense amplifier effectively senses and amplifies cell data having a small voltage difference applied to a main bit line, thereby improving operation characteristics in a low voltage. Also, a sensing voltage of the main bit line is lowered, thereby reducing a cross talk noise effect between main bit lines.
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