发明名称 |
Menetelmä siirtymämetallinitridiohutkalvojen kasvattamiseksi |
摘要 |
This invention concerns a method for depositing transition metal nitride thin films by an Atomic Layer Deposition (ALD) type process. According to the method vapor-phase pulses of a metal source material, a reducing agent capable of reducing metal source material, and a nitrogen source material capable of reacting with the reduced metal source material are alternately and sequentially fed into a reaction space and contacted with the substrate. According to the invention as the reducing agent is used a boron compound which is capable of forming gaseous reaction byproducts when reacting with the metal source material. |
申请公布号 |
FI117944(B) |
申请公布日期 |
2007.04.30 |
申请号 |
FI19990002234 |
申请日期 |
1999.10.15 |
申请人 |
ASM INTERNATIONAL N.V., |
发明人 |
ELERS,KAI-ERIK;HAUKKA,SUVI PAEIVIKKI;SAANILA,VILLE;KAIPIO,SARI;SOININEN,PEKKA |
分类号 |
C23C16/44;C23C16/455;C23C16/32;C23C16/34;C30B25/02;C30B29/02;C30B29/36;C30B29/38;H01L21/285;H01L21/768 |
主分类号 |
C23C16/44 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|