PHOTOMASK, METHOD OF GENERATING RESIST PATTERN, AND METHOD OF FABRICATING MASTER INFORMATION CARRIER.

摘要

A RECESS (251) FOR DEAERATION IS FORMED IN THE SURFACE OF A RESIST FILM (2) BY USING THE PHOTOLITHOGRAPHY TECHNIQUE, A PHOTOMASK (3,3 1) IS ALLOWED TO COME INTO CONTACT WITH PROJECTIONS (252) FOR CLOSE CONTACT ON BOTH SIDES OR AROUND THE RECESS FOR DEAERATION, AND EVACUATION (7) IS PERFORMED VIA THE RECESS FOR DEAERATION, THEREBY ENHANCING CLOSE CONTACT BETWEEN THE PHOTOMASK (3,31) AND THE PROJECTIONS (252) FOR CLOSE CONTACT. WITH THE CONFIGURATION, A RESIST PATTERN (21) HAVING AN ACCURATE RECESS (251,253) WHILE PREVENTING DIFFRACTION OF LIGHT IS FORMED. THE MOST ILLUSTRATIVE DRAWING IS