| 摘要 |
THE PRESENT INVENTION IS A SEMICONDUCTOR STRUCTURE (10) FOR LIGHT EMITTING DEVICES THAT CAN EMIT IN THE RED ULTRAVIOLET PORTION OF THE ELECTROMAGNETIC SPECTRUM. THE STRUCTURE INCLUDES A FIRST N-TYPE CLADDING LAYER (11) OF A1xINyGA1-x-yN, WHERE O< X<1 AND O <Y < 1 AND (X + Y) <1; A SECOND N-TYPE CLADDING (12) LAYER OF A1XINYGA1-X-YN, WHERE O< X< 1 AND O <Y<1 AND (X+Y)<1, WHEREIN THE SECOND N-TYPE CLADDING LAYER (12) IS FURTHER CHARACTERIZED BY THE SUBSTANTIAL ABSENCE OF MAGNESIUM; AN ACTIVE PORTION BETWEEN THE FIRST AND SECOND CLADDING LAYERS (11,12) IN THE FORM OF A MULTIPLE QUANTUM WELL HAVING A PLURALITY OF INXGA1-XN WELL LAYERS WHERE O<X<1 SEPARATED BY A CORRESPONDING PLURALITY OF A1XINYGA1-X-YN BARRIER LAYERS WHERE O<X<1 AND O<Y<1; A P-TYPE LAYER (18) OF A GROUP III NITRIDE, WHEREIN THE SECOND N-TYPE CLADDING LAYER (12) IS POSITIONED BETWEEN THE P-TYPE LAYER AND THE MULTIPLE QUANTUM WELL; AND WHEREIN THE FIRST AND SECOND N-TYPE CLADDING LAYERS (11,12) HAVE RESPECTIVE BANDGAPS THAT ARE EACH LARGER THAN THE BANDGAPS OF THE WELL LAYERS. IN PREFERRED EMBODIMENTS, A GROUP III NITRIDE SUPERLATTICE SUPPORTS THE MULTIPLE QUANTUM WELL.(FIG. 1)
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