SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND A METHOD OF MANUFACTURING THE SAME

摘要

A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND A METHOD OF MANUFACTURING THE SAME.THE SURFACE OF A SUBSTRATE (1) OF AN ACTIVE REGION (L) SURROUNDED BY AN ELEMENT ISOLATION TRENCH (2) IS HORIZONTALLY FLAT IN THE CENTER PORTION OF THE ACTIVE REGION (L) BUT FAILS TOWARD THE SIDE WALL OF THE ELEMENT ISOLATION TRENCH (2) IN THE SHOULDER PORTION OF THE ACTIVE REGION (L). THIS INCLINED SURFACE CONTAINS TWO INCLINED SURFACES (S1,S2) HAVING DIFFERENTINCLINATION ANGLES. THE FIRST INCLINED SURFACE (S1), NEAR THE CENTER PORTION OF THE ACTIVE REGION (L) IS RELATIVELY STEEP AND THE SECOND INCLINED SURFACE (S2) NEAR THE SIDE WALL OF THE ELEMENT ISOLATION TRENCH (2) IS GENTLER THAN THE FIRST INCLINED SURFACE (S1). THE SURFACE OF THE SUBSTRATE (1) IN THE SHOULDER PORTION OF THE ACTIVE REGION (L) IS WHOLLY ROUNDED AND HAS NO ANGULAR PORTION.(FIGURE 29).