| 摘要 |
PROBLEM TO BE SOLVED: To solve at least one of the problem caused by a plasma process in processes for manufacturing a liquid crystal display; the problem of a hillock, or the like of a gate electrode, or the like; and the problem of contact failure at the takeout section of a liquid crystal panel. SOLUTION: The method is used for manufacturing the liquid crystal display having a thin-film transistor in the liquid crystal panel. In this case, a gate electrode is formed which has an aluminum film containing one kind or a plurality of kinds of elements selected from Sc, Y, lanthanoid, and actinoid, first wiring is formed which is connected to the gate electrode electrically and has a shape allowing a pulse current to be discharged easily, second wiring connected to the impurity region of the thin-film transistor is formed, and a transparent conductive film is formed in the takeout section of the liquid crystal panel extended from the second wiring. COPYRIGHT: (C)2007,JPO&INPIT
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