| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a contact hole of a semiconductor device capable of effectively preventing an amorphous carbon film from being damaged in forming a contact hole. SOLUTION: The system includes a step that forms a conductive pattern on a semiconductor substrate 31, a step that forms an insulating film 35 on the entire semiconductor substrate 31 including the conductive pattern, a step that laminates the amorphous carbon film 37 and an oxide film 38 on the insulating film 35, a step that forms a mask pattern by selective etching, and a step that forms a contact hole by etching the insulating film 35 in a contact hole formation region with the mask pattern. A lifting phenomenon occurring in the case that amorphous carbon and an SiON hard mask are used as a self-aligned contact mask can be prevented, because the oxide hard mask is used on the amorphous carbon film 37 in place of a conventionally used SiON film. COPYRIGHT: (C)2007,JPO&INPIT
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