| 摘要 |
PROBLEM TO BE SOLVED: To provide a means for securing a total electric-charge amount of a ferroelectric capacitor, while preventing degradation in polarization characteristics of a ferroelectric substance of the ferroelectric capacitor hermetically sealed in a hermetically-sealed structure formed of upper/lower hydrogen barrier films, after forming the lower hydrogen barrier film. SOLUTION: The semiconductor device has a MOSFET having diffused layers, an interlayer insulating film covering the MOSFET, the lower hydrogen barrier film formed on the interlayer insulating film, a silicon oxide film formed on the lower hydrogen barrier film, a contact plug penetrating through the interlayer insulating film, a lower hydrogen barrier film, and a silicon oxide film electrically connected to one diffused layer of the MOSFET, a lower electrode formed on the silicon oxide film electrically connected to the contact plug, the ferroelectric capacitor formed by laminating the ferroelectric substance and an upper electrode on the lower electrode in sequence, and the upper hydrogen barrier film covering the ferroelectric capacitor and the silicon oxide film and connected to the lower hydrogen barrier film. COPYRIGHT: (C)2007,JPO&INPIT
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