| 摘要 |
A CMOS image sensor and a method for manufacturing the same are provided. The CMOS image sensor includes: a photo diode formed in a semiconductor substrate for generating an optical signal from incident light; a first micro lens formed on the semiconductor substrate above the photo diode; a plurality of inter-layer dielectrics and metal wires formed on the semiconductor substrate having the first micro lens; a planarization layer formed above the plurality of inter-layer dielectrics metal wires; and a second micro lens formed on the planarization layer. In one embodiment, the second micro lens incorporates a fly-eye pattern.
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