| 摘要 |
A transistor cell and method of making a transistor cell is disclosed. In one embodiment a transistor cell, includes first metal line spacers and the first gate spacers that vertically at least partially overlap, wherein second metal line spacers and second gate spacers vertically at least partially overlap. A contact region is defined above a second source/drain region and/or a third source/drain region by a respective adjacent first metal line spacer and second metal line spacer and by a respective adjacent first gate spacer and second gate spacer. A contact via vertically extends from the contact region at least to the layer of the first metal line.
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