发明名称 Power device with high switching speed and manufacturing method thereof
摘要 A power device is formed by a thyristor and by a MOSFET transistors, series-connected between a first and a second current-conduction terminal. The power device moreover has a control terminal connected to an insulated-gate electrode of the MOSFET transistor and receiving a control voltage for turning on/off the device, and a third current-conduction terminal connected to the thyristor for fast extraction of charges during turning-off. Thereby, upon turning off, there are no current tails, and turning off is very fast. The power device does not have parasitic components and consequently has a very high reverse-bias safe-operating area.
申请公布号 US2007090415(A1) 申请公布日期 2007.04.26
申请号 US20030557766 申请日期 2003.05.19
申请人 STMICROELECTRONICS S.R.L. 发明人 RONSISVALLE CESARE
分类号 H01L29/76;H01L21/332;H01L29/745 主分类号 H01L29/76
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