发明名称 |
Compound semiconductor device and method of manufacturing the same |
摘要 |
A method of manufacturing a compound semiconductor device comprises forming a scribed groove extending from an edge of a major surface of a laminated body to an internal region on the first major surface. The laminated body has the first major surface and a second major surface and is formed by crystal growth of a compound semiconductor multilayer film on a substrate. The scribed groove is shallow at the edge and deep in the internal region. The method may further comprise separating the laminated body into first and second portions separated by a separation plane including the scribed groove by applying load to the second major surface of the laminated body.
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申请公布号 |
US2007093041(A1) |
申请公布日期 |
2007.04.26 |
申请号 |
US20060376547 |
申请日期 |
2006.03.16 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
TANAKA AKIRA;ONOMURA MASAAKI;IIDA SEIJI;MATSUYAMA TAKAYUKI |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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