METHOD OF FABRICATING SEMICONDUCTOR MEMORY DEVICE HAVING PLURALITY OF STORAGE NODE ELECTRODES

摘要

PROBLEM TO BE SOLVED: To provide a method of fabricating a semiconductor memory device having plurality of storage node electrodes.

SOLUTION: The method of fabricating the semiconductor memory device, includes a step of covering a mold insulating film portion over the plurality of storage node electrodes and one part of a semiconductor substrate, and forming a capping film exposing the mold insulating film portion located over the other portion of the semiconductor substrate, a step of selectively removing the mold insulating film using wet etching to expose sidewalls of the plurality of storage node electrodes covered by the capping film, and a step of removing the capping film using dry etching to expose upper portions of the plurality of storage node electrodes.

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