| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a substrate with a multilyer reflection film which is suitable for a reflection type mask to be used in a lithography method using an exposure light of a short wave band such as an EUV light, has high reflection rate, has high surface smoothness and has less defect. <P>SOLUTION: The substrate with a multilayer reflection film is formed in such a way that a multilayer base film made of an alternate laminate film of Mo/Si, an intermediate layer made of an Si film, and a multilayer reflection film made of an alternate laminate film of Mo/Si for reflecting an exposure light, are successively provided on a substrate. This substrate satisfies a formula (1):n×dtop-0.05≤dbottom≤n×dtop+0.05 (where n is natural number of 1 or more), and a formula (2):m×dtop-1.2≤dSi≤m×dtop+1.2 (where m is integer of 0 or more), where dbottom [unit:nm] is the periodic length of the multilayer base film, dSi [unit:nm] is the thickness of the intermediate layer, and dtop [unit:nm] is the periodic length of the multilayer reflection film. <P>COPYRIGHT: (C)2007,JPO&INPIT |
