发明名称 |
Methods of Forming Non-Volatile Memory Devices and Devices Formed Thereby |
摘要 |
Methods of forming non-volatile memory devices include steps to define features that enhance shielding of electronic interference between adjacent floating gate electrodes and improve leakage current and threshold voltage characteristics. These features also support improved leakage current and threshold voltage characteristics in string selection transistors that are coupled to non-volatile memory cells.
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申请公布号 |
US2007093020(A1) |
申请公布日期 |
2007.04.26 |
申请号 |
US20060551903 |
申请日期 |
2006.10.23 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM JONG-WON;PARK JONG-HO;KIM YONG-SEOK |
分类号 |
H01L21/8242;H01L21/8238 |
主分类号 |
H01L21/8242 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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