Verbesserte dielektrische Passivierung für Halbleiterbauelemente

摘要

A semiconductor device is disclosed that includes a layer of Group III nitride semiconductor material that includes at least one surface, a control contact on the surface for controlling the electrical response of the semiconductor material, a dielectric barrier layer covering at least a portion of the one surface adjacent the control contact, the dielectric barrier layer having a bandgap greater than the bandgap of the Group III nitride and a conduction band offset from the conduction band of the Group III nitride; and a dielectric protective layer covering the remainder of the Group III nitride surface.