| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device that hardly allows a silicon nitride film to be closer to a semiconductor substrate, and a method for manufacturing the semiconductor integrated circuit device that easily processes a contact hole. <P>SOLUTION: The semiconductor integrated circuit device is embedded in the contact hole formed by a self-aligned contact process using the silicon nitride film as an etching stopper on a silicon substrate 21 enclosed by an element isolation region 4, and has contact plugs 33 electrically connected to diffusion layers 2, 3. Silicon layers 28 that contact with diffusion layer with sides of each gate insulating film 22 formed by selective epitaxial growth on exposed surfaces of the layers 2, 3, the silicon nitride films or insulating films 27' composed of a silicon oxide film are embedded while contacting with gate insulating films 22 between each gate electrode 22 and each silicon layer 28, and silicon nitride films 26, 29' and 32 are isolated from the substrate 21 by the films 27'. <P>COPYRIGHT: (C)2007,JPO&INPIT |
