发明名称 MODE REGISTER AND NONVOLATILE SEMICONDUCTOR MEMORY APPARATUS
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a mode register and a nonvolatile semiconductor memory apparatus in which various default values can be set in accordance with the user's request without requiring an additional process step. <P>SOLUTION: A first programmable element is connected between a PMOS transistor MP100 connected to a power supply voltage VCC and a node N10. A second programmable element is connected between a NMOS transistor MN100 connected to a ground VSS and a node N10. Respective programmable elements are constituted of depletion type transistors D100, D101 being same as memory cells of a mask ROM apparatus, the depletion type transistors are programmed in a first program state of a conduction state in an ion injection process for memory cells of the mask ROM apparatus or in a second program state of a non-conduction state. <P>COPYRIGHT: (C)2007,JPO&INPIT</p>
申请公布号 JP2007109401(A) 申请公布日期 2007.04.26
申请号 JP20070003968 申请日期 2007.01.12
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 RI TOYU;IM HEUNG-SOO
分类号 G11C11/417;G11C17/18;G11C7/10;G11C11/413;G11C16/02 主分类号 G11C11/417
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