THIN FILM SEMICONDUCTOR EPITAXIAL SUBSTRATE AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a thin film semiconductor epitaxial substrate whereby a semiconductor device with high reliability can be manufactured by suppressing the effect of a carrier concentration of its sub-collector layer on a current amplification factor and to provide a manufacturing method thereof. SOLUTION: A boron added layer 42A resulting from adding boron (B) to a collector layer 42 is formed to part of the collector layer 42 in the thin film semiconductor epitaxial substrate 1 formed with the sub collector layer 41 and the collector layer 42 so as to thereby prevent the current amplification factor from being decreased even when the sub collector layer 41 is doped with a high concentration. COPYRIGHT: (C)2007,JPO&INPIT