METHOD OF FABRICATING FREESTANDING GaN SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide a simple, low-cost method of fabricating a freestanding gallium nitride substrate, which can achieve a high fabricating yield. SOLUTION: The method of fabricating the freestanding gallium nitride substrate includes: a step of treating the surface of a GaN substrate layer under an atmosphere of HCl and NH3gases in a reactor of a HVPE system to form a porous GaN layer; a step of forming in situ a GaN crystal growth layer within the single reactor; and a step of cooling the GaN substrate layer for allowing self-separation of the GaN crystal growth layer. COPYRIGHT: (C)2007,JPO&INPIT