| 摘要 |
Structure and method are provided for plastic encapsulated semiconductor devices. The encapsulation comprises a plastic binder having a dielectric constant epsilon<SUB>b </SUB>and loss tangent delta<SUB>b </SUB>and a filler mixed therewith having lower epsilon<SUB>f </SUB>and/or delta<SUB>f </SUB>so that epsilon<SUB>m </SUB>and/or delta<SUB>m </SUB>of the mix is less than epsilon<SUB>b</SUB>, delta<SUB>b</SUB>, respectively. Hollow microspheres of varied sizes are preferred fillers, desirably in the size range of about 0.3 to 300 micrometers. These should comprise at least about 50%, more preferably 60 to 70% or more of the mixture by volume so that the resulting mix has epsilon<SUB>m</SUB><3, preferably <2.5 AND delta<SUB>m</SUB><0.005. The encapsulant mixture is placed in proximity to or on the die so that the fringing electric fields of the die, die wiring and/or die connections are exposed to a lower epsilon and/or delta than that of a plastic encapsulation without the filler.
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