发明名称 |
Plasma reactor with feed forward thermal control system using a thermal model for accommodating RF power changes or wafer temperature changes |
摘要 |
A plasma reactor having a reactor chamber and an electrostatic chuck with a surface for holding a workpiece inside the chamber includes a backside gas pressure source coupled to the electrostatic chuck for applying a thermally conductive gas under a selected pressure into a workpiece-surface interface formed whenever a workpiece is held on the surface and an evaporator inside the electrostatic chuck and a refrigeration loop having an expansion valve for controlling flow of coolant through the evaporator. The reactor further includes a temperature sensor in the electrostatic chuck and a memory storing a schedule of changes in RF power or wafer temperature. The reactor further includes a thermal model capable of simulating heat transfer between the evaporator and the surface based upon measurements from the temperature sensor, and a control processor coupled to the thermal model and to the memory and governing the backside gas pressure source in response to a prediction from the model of a change in the selected pressure that would compensate for the next scheduled change in RF power or implement the next scheduled change in wafer temperature.
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申请公布号 |
US2007091539(A1) |
申请公布日期 |
2007.04.26 |
申请号 |
US20060409183 |
申请日期 |
2006.04.21 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
BUCHBERGER DOUGLAS A.JR.;BRILLHART PAUL L.;FOVELL RICHARD;TAVASSOLI HAMID;BURNS DOUGLAS H.;BERA KALLOL;HOFFMAN DANIEL J. |
分类号 |
H01T23/00 |
主分类号 |
H01T23/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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