| 发明名称 |
Semiconductor integrated circuit and fabrication process thereof |
| 摘要 |
A semiconductor integrated circuit that includes thereon a flash memory and a plurality of MOS transistors using different power supply voltages is formed by a process in which a thermal oxidation process is applied to one of the device regions while covering the other device regions by an oxidation-resistant film. |
| 申请公布号 |
US2007093027(A1) |
申请公布日期 |
2007.04.26 |
| 申请号 |
US20050134419 |
申请日期 |
2005.05.23 |
| 申请人 |
FUJITSU LIMITED |
发明人 |
HASHIMOTO HIROSHI;TAKAHASHI KOJI |
| 分类号 |
H01L21/336;H01L21/8234;H01L21/8239;H01L21/8247;H01L27/088;H01L27/10;H01L27/105;H01L27/115;H01L29/423;H01L29/788;H01L29/792 |
主分类号 |
H01L21/336 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
