发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which efficiently and easily manufactures a semiconductor device that is operable with reduced power consumption, is stable in its electrical performance, and has high endurance. <P>SOLUTION: A roughly plate-shaped electrically-conductive current path member 6 is supported by touching itself to a contact end surface 15a for feeding ultrasonic vibration of an ultrasonic bonding jig 15 by sucking with suction holes 16 formed in the ultrasonic bonding jig 15. The ultrasonic bonding jig 15 is moved to contact upper surfaces of electrode members 4 formed on the upper surface of a semiconductor chip 5 while keeping the electrically conductive member 6 supported by the contact end surface 15a. The current path member 6 and the electrode members 4 are directly ultrasonic bonded by feeding ultrasonic vibration from the contact end surface 15a to the current path member 6. <P>COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007110167(A) 申请公布日期 2007.04.26
申请号 JP20070016575 申请日期 2007.01.26
申请人 TOSHIBA CORP 发明人 FUNATO NORIHIDE;SAWANO HIROSHI;NANBA MASATAKA
分类号 H01L21/607 主分类号 H01L21/607
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