发明名称 |
METHOD FOR PREVENTING SHORT CIRCUIT OF ELECTRODE AND PLATE FOR PREVENTING SHORT CIRCUIT |
摘要 |
PROBLEM TO BE SOLVED: To prevent a short circuit due to the deposition of droplets and the stacking of the deposits by preventing the flow-down of the droplets existing around an electrode arranged in a reactor for producing polycrystal silicon. SOLUTION: The method for preventing the short circuit of the electrode includes attaching a plate to the electrode arranged in the reactor for producing the polycrystal silicon so that the plate can overhang around the electrode. The plate for preventing the short circuit of the electrode is made of a plate material having a recess opened toward a side; overhangs around the electrode when the plate is set so that the recess surrounds a shaft of the electrode; and consequently prevents the flow-down of the droplets around the electrode. COPYRIGHT: (C)2007,JPO&INPIT
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申请公布号 |
JP2007107030(A) |
申请公布日期 |
2007.04.26 |
申请号 |
JP20050297001 |
申请日期 |
2005.10.11 |
申请人 |
MITSUBISHI MATERIALS POLYCRYSTALLINE SILICON CORP |
发明人 |
HASEGAWA SHUNICHI;HATAKEYAMA NAOKI |
分类号 |
C23C16/44;C23C16/24 |
主分类号 |
C23C16/44 |
代理机构 |
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代理人 |
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地址 |
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