发明名称 Thin film transistor, method of manufacturing the same and flat panel display having the thin film transistor
摘要 A thin film transistor includes: a gate electrode; source and drain electrodes insulated from the gate electrode; an organic semiconductor layer that is insulated from the gate electrode and electrically connected to the source and drain electrodes; an insulating layer that insulates the gate electrode from the source and drain electrodes or the organic semiconductor layer; a hydrophobic layer which covers the source and drain electrodes or insulating layer and has an opening that defines a region corresponding to the organic semiconductor layer; and a hydrophilic layer formed in the opening of the hydrophobic layer, wherein the organic semiconductor layer is formed on the hydrophilic layer. The thin film transistor includes the organic semiconductor layer having a highly precise pattern that is formed without an additional patterning process.
申请公布号 US2007090362(A1) 申请公布日期 2007.04.26
申请号 US20060582973 申请日期 2006.10.19
申请人 SAMSUNG SDI CO., LTD. 发明人 AHN TAEK;SUH MIN-CHUL;PARK JIN-SEONG
分类号 H01L29/76;H01L21/84 主分类号 H01L29/76
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