METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

A method for fabricating a semiconductor device is provided to easily adjust CD(Critical Dimension) by preventing the CD of an etch target layer in a low area from being increased by an amorphous carbon layer deposited by a spacer method. A hard mask layer(104), a first ARC(Anti-Reflective Coating) and a second ARC are sequentially formed on a substrate(100) having an etch target layer(102) including low and high areas. A first photoresist layer pattern is formed on the second ARC, covering the low area and having an opening partially exposing the second ARC in the high area. The exposed part of the second ARC and the first ARC and the hard mask layer under the second ARC are etched to partially expose the etch target layer in the high area. The exposed etch target layer is etched to form a first pattern. A second photoresist layer pattern(114) is formed on the first pattern and the second ARC in the low area, covering the first pattern and having an opening partially exposing the second ARC in the low area. The exposed part of the second ARC and the first ARC and the hard mask layer under the second ARC are etched to partially expose the etch target layer in the low area. A spacer is formed on the resultant structure. The exposed part of the etch target layer in the low area is etched to form a second pattern. The hard mask layer is eliminated.