Memory cell e.g. flash memory cell, arrangement, has deletion-memory sector and reading-memory sector are provided with memory cells, where memory cells of sectors are different from each other

摘要

The arrangement has memory cells (50 ax, 50 bx, 50 cy,50 dy) a deletion line (10) for deleting memory cells and a reading line (20) for reading out the memory cells. Deletion-memory sector and reading-memory sector are provided with the memory cells. The deletion line is switchable to the memory cells of the deletion-memory sector, and the reading line is switchable to the memory cells of the reading-memory sector. The memory cells of the deletion-memory sector and the reading-memory sector are different from each other. The memory cells have a control-gates, sources and drains. Independent claims are also included for the following: (1) a method for deletion of memory cells in a memory cell arrangement (2) a method for reading memory cells in a memory cell arrangement.