| 发明名称 |
HIGH VOLTAGE SEMICONDUCTOR DEVICE |
| 摘要 |
A compound semiconductor device is comprising a compound semiconductor substrate ( 219 ) having a ground plane ( 205 ); an active element ( 201 ) disposed on the substrate; a passive element ( 211 ) disposed on the substrate and electrically coupled to the active element; and an insulating layer ( 202 ) adjacent the substrate and interposed between the passive device and ground surface such that there is no resistive ground path from the passive device to the ground surface. |
| 申请公布号 |
EP1364405(A4) |
申请公布日期 |
2008.12.24 |
| 申请号 |
EP20020707617 |
申请日期 |
2002.01.30 |
| 申请人 |
M/A-COM, INC. |
发明人 |
HOAG, DAVID RUSSELL;BOLES, TIMOTHY, EDWARD;CURCIO, DANIEL, G. |
| 分类号 |
H01L21/331;H01L23/58;H01L21/8222;H01L23/31;H01L23/48;H01L23/66;H01L27/06;H01L29/201;H01L29/221;H01L29/737;H01L29/861;H01L29/868;H01L31/02;H01L31/072;H01L33/00;H01P5/12;H01S5/022 |
主分类号 |
H01L21/331 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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