| 摘要 |
<p>A polishing method for polishing a polysilicon film provided on a silicon substrate having an isolation region is provided. The method includes preliminarily polishing the polysilicon film using a preliminary polishing composition containing abrasive grains, an alkali, a water-soluble polymer, and water till a part of the top surface of the isolation region is exposed; and finally polishing the preliminarily polished polysilicon film using a final polishing composition containing abrasive grains, an alkali, a water-soluble polymer, and water till the whole top surface of the isolation region is exposed. The content of the water-soluble polymer in the preliminary polishing composition is 0.0075-0.05 % by mass, and the content of the water-soluble polymer in the final polishing composition is 0.002-0.01 % by mass.</p> |
